By Rakesh Chadha
This ebook presents a useful primer at the thoughts used in the layout of low strength electronic semiconductor units. Readers will enjoy the hands-on method which starts off shape the ground-up, explaining with simple examples what energy is, the way it is measured and the way it affects at the layout strategy of application-specific built-in circuits (ASICs). The authors use either the Unified strength structure (UPF) and customary strength layout (CPF) to explain intimately the ability reason for an ASIC after which consultant readers via various architectural and implementation ideas that may aid meet the ability cause. From reading procedure energy intake, to recommendations that may be hired in a low strength layout, to an in depth description of 2 trade criteria for shooting the facility directives at a variety of stages of the layout, this ebook is full of details that may provide ASIC designers a aggressive aspect in low-power design.
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Additional resources for An ASIC Low Power Primer: Analysis, Techniques and Specification
2 Power Computation for Basic Cells and Macros This section illustrates the detailed power computation of sample standard cells and memory macros using the library descriptions and the switching activity values. 1 For the purposes of simplicity, we have assumed the signal cannot be in unknown (or X) state anytime. 2 Power Computation for Basic Cells and Macros 47 Fig. 1 Example waveforms with same static probability but different transition rates Fig. 2 Example waveforms with same transition rates but different static probability Fig.
090”); } } } } This example shows the power specification for the CLK pin toggles described within two when-conditions. Q)”) represents the case when the output Q is the same as D and thus the clock does not cause any change in the state of the flip-flop. The internal power in this case is essentially the power due to clock inverter (within the flip-flop) switching when the clock switches. D&Q)”) represents the case when the clock results in a change in state of the flip-flop. The internal power in this case is only for the inactive clock edge (in this case, the falling edge of the clock).
The gate oxide tunneling, which was negligible at process technologies 100 nm and above, is a significant contributor to leakage at lower temperatures for 65 nm or finer process technologies. For example, gate oxide tunneling leakage may exceed the subthreshold leakage at room temperature for 65 nm or finer process technologies. At high temperatures, the subthreshold leakage continues to be the dominant contributor to leakage power. 3 shows the leakage of a typical 2-input nand cell which increases very rapidly as the temperature is increased.